AOC2422 Todos los transistores

 

AOC2422 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOC2422
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 6 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 5 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.8 V
   Qgⓘ - Carga de la puerta: 9.5 nC
   trⓘ - Tiempo de subida: 2100 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm
   Paquete / Cubierta: ALPHADFN0.97X0.97A

 Búsqueda de reemplazo de MOSFET AOC2422

 

AOC2422 Datasheet (PDF)

 ..1. Size:240K  aosemi
aoc2422.pdf

AOC2422
AOC2422

AOC24228V N-Channel MOSFETGeneral Description Product SummaryVDS8VThe AOC2422 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=2.5V) 3.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=2.5V)

 8.1. Size:253K  aosemi
aoc2421.pdf

AOC2422
AOC2422

AOC24218V P-Channel MOSFETGeneral Description Product SummaryVDS-8VThe AOC2421 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-2.5V) -2.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=-2.5V)

 8.2. Size:251K  aosemi
aoc2423.pdf

AOC2422
AOC2422

AOC242320V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AOC2423 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -2Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)

 9.1. Size:260K  aosemi
aoc2414.pdf

AOC2422
AOC2422

AOC24148V N-Channel MOSFETGeneral Description Product SummaryVDS8VThe AOC2414 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=2.5V) 4.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=2.5V)

 9.2. Size:256K  aosemi
aoc2413.pdf

AOC2422
AOC2422

AOC24138V P-Channel MOSFETGeneral Description Product SummaryVDS-8VThe AOC2413 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-2.5V) -3.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=-2.5V)

 9.3. Size:253K  aosemi
aoc2417.pdf

AOC2422
AOC2422

AOC241720V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AOC2417 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -3.5Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)

 9.4. Size:252K  aosemi
aoc2415.pdf

AOC2422
AOC2422

AOC241520V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AOC2415 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -3.5Awith gate voltages as low as 1.5V while retaining a 8V RDS(ON) (at VGS=-4.5V)

 9.5. Size:209K  aosemi
aoc2403.pdf

AOC2422
AOC2422

AOC2403 20V P-Channel MOSFETGeneral Description Product SummaryVds -20V ID (at VGS=-4.5V) -1.8AThe AOC2403 uses advanced trench technology to provide RDS(ON) (at VGS=-4.5V)

 9.6. Size:223K  aosemi
aoc2412.pdf

AOC2422
AOC2422

AOC241220V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AOC2412 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4.5Awith gate voltages as low as 1.8V while retaining a 8V RDS(ON) (at VGS=4.5V)

 9.7. Size:256K  aosemi
aoc2401.pdf

AOC2422
AOC2422

AOC240130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AOC2401 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -3Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)

 9.8. Size:202K  aosemi
aoc2411.pdf

AOC2422
AOC2422

AOC241130V P-Channel MOSFETGeneral Description Product SummaryVds -30V ID (at VGS=-4.5V) -3.4AThe AOC2411 uses advanced trench technology to provide RDS(ON) (at VGS=-4.5V)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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