AOC2422 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOC2422
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 6 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 2100 ns
Cossⓘ - Выходная емкость: 250 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.033 Ohm
Тип корпуса: ALPHADFN0.97X0.97A
AOC2422 Datasheet (PDF)
aoc2422.pdf
AOC24228V N-Channel MOSFETGeneral Description Product SummaryVDS8VThe AOC2422 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=2.5V) 3.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=2.5V)
aoc2421.pdf
AOC24218V P-Channel MOSFETGeneral Description Product SummaryVDS-8VThe AOC2421 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-2.5V) -2.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=-2.5V)
aoc2423.pdf
AOC242320V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AOC2423 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -2Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)
aoc2414.pdf
AOC24148V N-Channel MOSFETGeneral Description Product SummaryVDS8VThe AOC2414 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=2.5V) 4.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=2.5V)
aoc2413.pdf
AOC24138V P-Channel MOSFETGeneral Description Product SummaryVDS-8VThe AOC2413 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-2.5V) -3.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=-2.5V)
aoc2417.pdf
AOC241720V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AOC2417 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -3.5Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)
aoc2415.pdf
AOC241520V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AOC2415 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -3.5Awith gate voltages as low as 1.5V while retaining a 8V RDS(ON) (at VGS=-4.5V)
aoc2403.pdf
AOC2403 20V P-Channel MOSFETGeneral Description Product SummaryVds -20V ID (at VGS=-4.5V) -1.8AThe AOC2403 uses advanced trench technology to provide RDS(ON) (at VGS=-4.5V)
aoc2412.pdf
AOC241220V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AOC2412 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4.5Awith gate voltages as low as 1.8V while retaining a 8V RDS(ON) (at VGS=4.5V)
aoc2401.pdf
AOC240130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AOC2401 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -3Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)
aoc2411.pdf
AOC241130V P-Channel MOSFETGeneral Description Product SummaryVds -30V ID (at VGS=-4.5V) -3.4AThe AOC2411 uses advanced trench technology to provide RDS(ON) (at VGS=-4.5V)
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918