AOC2802 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOC2802
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 900 nS
Cossⓘ - Capacitancia de salida: 152 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.034 Ohm
Paquete / Cubierta: WLCSP
Búsqueda de reemplazo de AOC2802 MOSFET
AOC2802 Datasheet (PDF)
aoc2802.pdf

AOC2802Common-Drain Dual N-Channel Enhancement Mode FieldEffect TransistorGeneral Description Product SummaryVss 20VThe AOC2802 uses advanced trench technology to provide ID (at VGS=4.5V) 6Aexcellent RSS(ON), low gate charge and operation with gate RSS(ON) (at VGS=4.5V)
aoc2800.pdf

AOC2800Common-Drain Dual N-Channel Enhancement Mode FieldEffect TransistorGeneral Description Product SummaryVss 30VThe AOC2800 uses advanced trench technology to provide ID (at VGS=4.5V) 6Aexcellent RSS(ON), low gate charge and operation with gate RSS(ON) (at VGS=4.5V)
aoc2804.pdf

AOC280420V Common-Drain Dual N-Channel AlphaMOSGeneral Description Product SummaryVSS Trench Power AlphaMOS (MOS LV) technology 20V Low RSS(ON) IS (at VGS=4.5V) 4A With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoc2804b.pdf

AOC2804B20V Common-Drain Dual N-Channel AlphaMOSGeneral Description Product SummaryVSS Trench Power AlphaMOS (MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V)
Otros transistores... AOC2413 , AOC2414 , AOC2415 , AOC2417 , AOC2421 , AOC2422 , AOC2423 , AOC2800 , IRFZ46N , AOC2804 , AOC2806 , AOC4810 , AOD11S60 , AOD1N60 , AOD200 , AOD208 , AOD210 .
History: IXFN32N100Q3 | IXFK180N25T | KTK5131S
History: IXFN32N100Q3 | IXFK180N25T | KTK5131S



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