AOC2802 Datasheet and Replacement
Type Designator: AOC2802
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 900 nS
Cossⓘ - Output Capacitance: 152 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: WLCSP
AOC2802 substitution
AOC2802 Datasheet (PDF)
aoc2802.pdf

AOC2802Common-Drain Dual N-Channel Enhancement Mode FieldEffect TransistorGeneral Description Product SummaryVss 20VThe AOC2802 uses advanced trench technology to provide ID (at VGS=4.5V) 6Aexcellent RSS(ON), low gate charge and operation with gate RSS(ON) (at VGS=4.5V)
aoc2800.pdf

AOC2800Common-Drain Dual N-Channel Enhancement Mode FieldEffect TransistorGeneral Description Product SummaryVss 30VThe AOC2800 uses advanced trench technology to provide ID (at VGS=4.5V) 6Aexcellent RSS(ON), low gate charge and operation with gate RSS(ON) (at VGS=4.5V)
aoc2804.pdf

AOC280420V Common-Drain Dual N-Channel AlphaMOSGeneral Description Product SummaryVSS Trench Power AlphaMOS (MOS LV) technology 20V Low RSS(ON) IS (at VGS=4.5V) 4A With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoc2804b.pdf

AOC2804B20V Common-Drain Dual N-Channel AlphaMOSGeneral Description Product SummaryVSS Trench Power AlphaMOS (MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V)
Datasheet: AOC2413 , AOC2414 , AOC2415 , AOC2417 , AOC2421 , AOC2422 , AOC2423 , AOC2800 , 2N60 , AOC2804 , AOC2806 , AOC4810 , AOD11S60 , AOD1N60 , AOD200 , AOD208 , AOD210 .
Keywords - AOC2802 MOSFET datasheet
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