AOD2810 Todos los transistores

 ..1. Size:288K  aosemi
 aod2810.pdf

AOD2810 80V N-Channel MOSFET General Description Product Summary VDS 80V The AOD2810 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 46A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 ..2. Size:262K  inchange semiconductor
 aod2810.pdf

Isc N-Channel MOSFET Transistor AOD2810 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag

 8.1. Size:298K  aosemi
 aod2816.pdf

AOD2816 80V N-Channel MOSFET General Description Product Summary VDS 80V The AOD2816 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 35A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.2. Size:265K  inchange semiconductor
 aod2816.pdf

isc N-Channel MOSFET Transistor AOD2816 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V =80V(Min) DSS Static Drain-Source On-Resistance R =15m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

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 aod280a60 aoi280a60.pdf

AOD280A60/AOI280A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max

 9.2. Size:453K  aosemi
 aod280a60.pdf

AOD280A60/AOI280A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max