All MOSFET. AOD2810 Datasheet

 

AOD2810 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOD2810
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4 V
   |Id|ⓘ - Maximum Drain Current: 46 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 265 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-252

 AOD2810 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOD2810 Datasheet (PDF)

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aod2810.pdf

AOD2810 AOD2810

AOD281080V N-Channel MOSFETGeneral Description Product SummaryVDS80VThe AOD2810 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 46Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 ..2. Size:262K  inchange semiconductor
aod2810.pdf

AOD2810 AOD2810

Isc N-Channel MOSFET Transistor AOD2810FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag

 8.1. Size:298K  aosemi
aod2816.pdf

AOD2810 AOD2810

AOD281680V N-Channel MOSFETGeneral Description Product SummaryVDS80VThe AOD2816 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 35Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.2. Size:265K  inchange semiconductor
aod2816.pdf

AOD2810 AOD2810

isc N-Channel MOSFET Transistor AOD2816FEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V =80V(Min)DSSStatic Drain-Source On-Resistance: R =15m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

 9.1. Size:453K  aosemi
aod280a60.pdf

AOD2810 AOD2810

AOD280A60/AOI280A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: YJL2301C

 

 
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