AOD2910 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOD2910
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 53.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 31 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.7 V
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET AOD2910

AOD2910 Datasheet (PDF)

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aod2910.pdf

AOD2910100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD2910 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 31Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

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aod2910.pdf

isc N-Channel MOSFET Transistor AOD2910FEATURESDrain Current I = 31A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener

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aod2910e.pdf

AOD2910E100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 37A Low Gate Charge RDS(ON) (at VGS=10V)

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aod2910e.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOD2910EFEATURESWith TO-252( DPAK ) packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyIndustrial and motor drive applicationsDC/DC and AC/DC conver

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aod2916.pdf

AOD2916100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD2916 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 25Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

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aod2916.pdf

isc N-Channel MOSFET Transistor AOD2916FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =34m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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