AOD2910 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOD2910
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 53.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 31 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 95 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
Encapsulados: TO-252
Búsqueda de reemplazo de AOD2910 MOSFET
- Selecciónⓘ de transistores por parámetros
AOD2910 datasheet
aod2910.pdf
AOD2910 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOD2910 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 31A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aod2910.pdf
isc N-Channel MOSFET Transistor AOD2910 FEATURES Drain Current I = 31A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 24m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gener
aod2910e.pdf
AOD2910E 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 37A Low Gate Charge RDS(ON) (at VGS=10V)
aod2910e.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOD2910E FEATURES With TO-252( DPAK ) packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Industrial and motor drive applications DC/DC and AC/DC conver
Otros transistores... AOD254 , AOD2544 , AOD256 , AOD2606 , AOD2610 , AOD2810 , AOD2816 , AOD2908 , IRLB3034 , AOD2916 , AOD2922 , AOD2N100 , AOD2N60 , AOD2N60A , AOD3N40 , AOD3N50 , AOD3N60 .
History: BLV740
History: BLV740
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E | ASW65R095EFD | ASW65R046EFD | ASW65R041EFDA | ASW65R041E | ASW60R150E | ASW60R090EFDA
Popular searches
rjp63g4 datasheet | 2sc1115 | c3998 transistor | 2sa679 | 2sc3181 | 2sb324 | 2sc1904 | 2sc281
