Справочник MOSFET. AOD2910

 

AOD2910 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOD2910
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 53.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.7 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 31 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 95 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для AOD2910

 

 

AOD2910 Datasheet (PDF)

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 aod2910.pdf

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AOD2910100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD2910 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 31Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

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 aod2910.pdf

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isc N-Channel MOSFET Transistor AOD2910FEATURESDrain Current I = 31A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener

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 aod2910e.pdf

AOD2910 AOD2910

AOD2910E100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 37A Low Gate Charge RDS(ON) (at VGS=10V)

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 aod2910e.pdf

AOD2910 AOD2910

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOD2910EFEATURESWith TO-252( DPAK ) packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyIndustrial and motor drive applicationsDC/DC and AC/DC conver

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 aod2916.pdf

AOD2910 AOD2910

AOD2916100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD2916 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 25Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

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 aod2916.pdf

AOD2910 AOD2910

isc N-Channel MOSFET Transistor AOD2916FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =34m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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