AOD3N80 Todos los transistores

 ..1. Size:339K  aosemi
 aod3n80.pdf

AOD3N80 800V,2.8A N-Channel MOSFET General Description Product Summary The AOD3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver VDS 900V@150 high levels of performance and robustness in popular AC- ID (at VGS=10V) 2.8A DC applications. RDS(ON) (at VGS=10V)

 ..2. Size:208K  inchange semiconductor
 aod3n80.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOD3N80 FEATURES With TO-252(DPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 9.1. Size:276K  aosemi
 aod3n60.pdf

AOD3N60/AOU3N60 600V,2.5A N-Channel MOSFET General Description Product Summary The AOD3N60 & AOU3N60 have been fabricated using an advanced high voltage MOSFET process that is VDS 700V@150 designed to deliver high levels of performance and ID (at VGS=10V) 2.5A robustness in popular AC-DC applications. RDS(ON) (at VGS=10V)

 9.2. Size:389K  aosemi
 aod3n40.pdf

AOD3N40 400V,2.6A N-Channel MOSFET General Description Product Summary The AOD3N40 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver VDS 500V@150 high levels of performance and robustness in popular AC- ID (at VGS=10V) 2.6A DC applications. RDS(ON) (at VGS=10V)

 9.3. Size:273K  aosemi
 aod3n50.pdf

AOD3N50/AOU3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is VDS 600V@150 designed to deliver high levels of performance and ID (at VGS=10V) 2.8A robustness in popular AC-DC applications. RDS(ON) (at VGS=10V)

 9.4. Size:571K  aosemi
 aod3n60 aou3n60.pdf

AOD3N60/AOU3N60 600V,2.5A N-Channel MOSFET General Description Product Summary The AOD3N60 & AOU3N60 have been fabricated using an advanced high voltage MOSFET process that is VDS 700V@150 designed to deliver high levels of performance and ID (at VGS=10V) 2.5A robustness in popular AC-DC applications. RDS(ON) (at VGS=10V)

 9.5. Size:701K  aosemi
 aod3n50 aou3n50.pdf

AOD3N50/AOU3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is VDS 600V@150 designed to deliver high levels of performance and ID (at VGS=10V) 2.8A robustness in popular AC-DC applications. RDS(ON) (at VGS=10V)

 9.6. Size:265K  inchange semiconductor
 aod3n60.pdf

isc N-Channel MOSFET Transistor AOD3N60 FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =3.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.7. Size:265K  inchange semiconductor
 aod3n40.pdf

isc N-Channel MOSFET Transistor AOD3N40 FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Static Drain-Source On-Resistance R =3.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.8. Size:265K  inchange semiconductor
 aod3n50.pdf

isc N-Channel MOSFET Transistor AOD3N50 FEATURES Drain Current I = 2.8A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =3.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose