2N6969 Todos los transistores

 

2N6969 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N6969
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 1.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
   Paquete / Cubierta: TO213
     - Selección de transistores por parámetros

 

2N6969 Datasheet (PDF)

 9.1. Size:298K  rca
 2n583 2n584 2n640 2n641 2n642 2n643 2n644 2n645 2n656 2n696.pdf pdf_icon

2N6969

 9.2. Size:1095K  ixys
 2n6963 2n6965 2n7100 2n7101 2n7102 2n710.pdf pdf_icon

2N6969

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 9.3. Size:61K  microsemi
 2n696 2n697.pdf pdf_icon

2N6969

TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N697 JAN 2N696S 2N697S MAXIMUM RATINGS Ratings Symbol Value Units Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Total Power Dissipation @ T = 250C (1) 0.6 W APT @ T = 250C (2) 2.0 W C0Operating & Storage Juncti

 9.4. Size:270K  siliconix
 2n6962.pdf pdf_icon

2N6969

MOSTRAR MÁS

Otros transistores... 2N6966JANTX , 2N6966JANTXV , 2N6967 , 2N6967JANTX , 2N6967JANTXV , 2N6968 , 2N6968JANTX , 2N6968JANTXV , 50N06 , 2N6969JANTX , 2N6969JANTXV , 2N7000 , 2N7000P , 2N7001 , 2N7002 , 2N7002L , 2N7004 .

History: IRF3710S

 

 
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