2N6969 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N6969

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 70 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 1.6 pF

Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm

Package: TO213

2N6969 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N6969 Datasheet (PDF)

5.1. 2n583_2n584_2n640_2n641_2n642_2n643_2n644_2n645_2n656_2n696.pdf Size:298K _rca

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5.2. 2n6963_2n6965_2n7100_2n7101_2n7102_2n710.pdf Size:1095K _ixys

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5.3. 2n696_2n697.pdf Size:61K _microsemi

TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N697 JAN 2N696S 2N697S MAXIMUM RATINGS Ratings Symbol Value Units Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Total Power Dissipation @ T = 250C (1) 0.6 W A PT @ T = 250C (2) 2.0 W C 0 Operating & Storage Junction

5.4. 2n6962.pdf Size:270K _siliconix