AOD4146 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOD4146 datasheet

..1. Size:358K aosemi
aod4146.pdf pdf_icon

AOD4146/AOI4146 30V N-Channel MOSFET TM SDMOS General Description Product Summary 30V The AOD4146/AOI4146 is fabricated with SDMOSTM VDS ID (at VGS=10V) 55A trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)

..2. Size:266K inchange semiconductor
aod4146.pdf pdf_icon

isc N-Channel MOSFET Transistor AOD4146 FEATURES Drain Current I = 55A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R =5.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

8.1. Size:163K aosemi
aod4144.pdf pdf_icon

AOD4144 N-Channel SDMOSTM Power Transistor General Description Features The AOD4144 is fabricated with SDMOSTM trench VDS (V) =30V technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with (VGS = 10V) ID = 55A controlled switching behavior. This universal technology (VGS = 10V) RDS(ON)

8.2. Size:447K aosemi
aod414.pdf pdf_icon

AOD414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD414 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), shoot-through immunity ID = 85A (VGS = 10V) and body diode characteristics. This device is ideally RDS(ON)