AOD4146 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOD4146
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 62 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 55 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 375 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0056 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET AOD4146

AOD4146 Datasheet (PDF)

..1. Size:358K aosemi
aod4146.pdf

AOD4146/AOI414630V N-Channel MOSFETTMSDMOSGeneral Description Product Summary30VThe AOD4146/AOI4146 is fabricated with SDMOSTM VDS ID (at VGS=10V) 55Atrench technology that combines excellent RDS(ON) with lowgate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)

..2. Size:266K inchange semiconductor
aod4146.pdf

isc N-Channel MOSFET Transistor AOD4146FEATURESDrain Current I = 55A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =5.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

8.1. Size:163K aosemi
aod4144.pdf

AOD4144N-Channel SDMOSTM Power TransistorGeneral Description FeaturesThe AOD4144 is fabricated with SDMOSTM trench VDS (V) =30Vtechnology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with (VGS = 10V)ID = 55Acontrolled switching behavior. This universal technology (VGS = 10V)RDS(ON)

8.2. Size:447K aosemi
aod414.pdf

AOD414N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD414 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunityID = 85A (VGS = 10V)and body diode characteristics. This device is ideallyRDS(ON)

8.3. Size:898K cn vbsemi
aod4144.pdf

AOD4144www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSOLUT

8.4. Size:838K cn vbsemi
aod414.pdf

AOD414www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSOLU

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