AOD4146 MOSFET Datasheet: N-Ch, 30V, 55A. Full specification with pinout and replacement list

AOD4146 Specs and Replacement

   Type Designator: AOD4146
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 62 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 375 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
   Package: TO-252

AOD4146 substitution

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AOD4146 datasheet

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AOD4146/AOI4146 30V N-Channel MOSFET TM SDMOS General Description Product Summary 30V The AOD4146/AOI4146 is fabricated with SDMOSTM VDS ID (at VGS=10V) 55A trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V) ... See More ⇒

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isc N-Channel MOSFET Transistor AOD4146 FEATURES Drain Current I = 55A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R =5.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒

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AOD4144 N-Channel SDMOSTM Power Transistor General Description Features The AOD4144 is fabricated with SDMOSTM trench VDS (V) =30V technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with (VGS = 10V) ID = 55A controlled switching behavior. This universal technology (VGS = 10V) RDS(ON) ... See More ⇒

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AOD414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD414 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), shoot-through immunity ID = 85A (VGS = 10V) and body diode characteristics. This device is ideally RDS(ON) ... See More ⇒