AOD4184A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOD4184A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 215 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET AOD4184A

AOD4184A Datasheet (PDF)

..1. Size:232K aosemi
aod4184a.pdf

AOD4184A40V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD4184A combines advanced trench MOSFET 40V50Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON). This device is well suited for high

..2. Size:249K inchange semiconductor
aod4184a.pdf

isc N-Channel MOSFET Transistor AOD4184AFEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera

7.1. Size:287K aosemi
aod4184.pdf

AOD4184/AOI418440V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD4184/AOI4184 used advanced trench technology 40V50Aand design to provide excellent RDS(ON) with low gate ID (at VGS=10V)charge. With the excellent thermal resistance of the DPAK

7.2. Size:838K cn vbsemi
aod4184.pdf

AOD4184www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM RATI

7.3. Size:249K inchange semiconductor
aod4184.pdf

isc N-Channel MOSFET Transistor AOD4184FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral

Otros transistores... AOD4136 , AOD413A , AOD4146 , AOD4156 , AOD417 , AOD418 , AOD4180 , AOD4182 , IRF3710 , AOD4185 , AOD4186 , AOD4189 , AOD421 , AOD422 , AOD423 , AOD424 , AOD425 .

History: AO4818

Liste

Recientemente añadidas las descripciónes de los transistores: