AOD4184A
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOD4184A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 17
nS
Cossⓘ -
Output Capacitance: 215
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007
Ohm
Package:
TO-252
AOD4184A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOD4184A
Datasheet (PDF)
..1. Size:232K aosemi
aod4184a.pdf 
AOD4184A40V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD4184A combines advanced trench MOSFET 40V50Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON). This device is well suited for high
..2. Size:249K inchange semiconductor
aod4184a.pdf
isc N-Channel MOSFET Transistor AOD4184AFEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera
7.1. Size:287K aosemi
aod4184.pdf
AOD4184/AOI418440V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD4184/AOI4184 used advanced trench technology 40V50Aand design to provide excellent RDS(ON) with low gate ID (at VGS=10V)charge. With the excellent thermal resistance of the DPAK
7.2. Size:838K cn vbsemi
aod4184.pdf
AOD4184www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM RATI
7.3. Size:249K inchange semiconductor
aod4184.pdf
isc N-Channel MOSFET Transistor AOD4184FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral
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