AOD4185 Todos los transistores

 ..1. Size:269K  aosemi
 aod4185 aoi4185.pdf

AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4185/AOI4185 uses advanced trench VDS (V) = -40V technology to provide excellent RDS(ON) and low gate ID = -40A (VGS = -10V) charge. With the excellent thermal resistance of the RDS(ON)

 ..2. Size:269K  aosemi
 aod4185.pdf

AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4185/AOI4185 uses advanced trench VDS (V) = -40V technology to provide excellent RDS(ON) and low gate ID = -40A (VGS = -10V) charge. With the excellent thermal resistance of the RDS(ON)

 ..3. Size:884K  cn vbsemi
 aod4185.pdf

AOD4185 www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle

 ..4. Size:265K  inchange semiconductor
 aod4185.pdf

isc P-Channel MOSFET Transistor AOD4185 FEATURES Drain Current I = -40A@ T =25 D C Drain Source Voltage- V = -40V(Min) DSS Static Drain-Source On-Resistance R =15m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 8.1. Size:214K  aosemi
 aod4189.pdf

AOD4189 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4189 uses advanced trench technology and VDS (V) = -40V design to provide excellent RDS(ON) with low gate ID = -40A (VGS = -10V) charge. With the excellent thermal resistance of the RDS(ON)

 8.2. Size:287K  aosemi
 aod4184.pdf

AOD4184/AOI4184 40V N-Channel MOSFET General Description Product Summary VDS The AOD4184/AOI4184 used advanced trench technology 40V 50A and design to provide excellent RDS(ON) with low gate ID (at VGS=10V) charge. With the excellent thermal resistance of the DPAK

 8.3. Size:142K  aosemi
 aod4187.pdf

AOD4187 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4187 uses advanced trench technology and VDS (V) = -40V design to provide excellent RDS(ON) with low gate charge. ID = -45A (VGS = -10V) With the excellent thermal resistance of the DPAK RDS(ON)

 8.4. Size:232K  aosemi
 aod4184a.pdf

AOD4184A 40V N-Channel MOSFET General Description Product Summary VDS The AOD4184A combines advanced trench MOSFET 40V 50A technology with a low resistance package to provide ID (at VGS=10V) extremely low RDS(ON). This device is well suited for high

 8.5. Size:262K  aosemi
 aod4182.pdf

AOD4182 80V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 80V The AOD4182 is fabricated with SDMOSTM trench ID (at VGS=10V) 53A technology that combines excellent RDS(ON) with low gate

 8.6. Size:263K  aosemi
 aod4180.pdf

AOD4180 80V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 80V The AOD4180 is fabricated with SDMOSTM trench 54A ID (at VGS=10V) technology that combines excellent RDS(ON) with low gate

 8.7. Size:148K  aosemi
 aod4186.pdf

AOD4186 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide VDS (V) =40V extremely low RDS(ON). This device is ideal for low (VGS = 10V) ID = 35A voltage inverter applications. (VGS = 10V) RDS(ON)

 8.8. Size:344K  aosemi
 aod4184 aoi4184.pdf

AOD4184/AOI4184 40V N-Channel MOSFET General Description Product Summary VDS 40V The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON) with ID (at VGS=10V) 50A low gate charge. With the excellent thermal resistance of RDS(ON) (at VGS=10V)

 8.9. Size:280K  aosemi
 aod418.pdf

AOD418/AOI418 30V N-Channel MOSFET General Description Product Summary VDS The AOD418/AOI418 uses advanced trench technology to 30V 36A provide excellent RDS(ON), low gate charge and low gate ID (at VGS= 10V) resistance. With the excellent thermal resistance of the

 8.10. Size:938K  cn vbsemi
 aod4189.pdf

AOD4189 www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle

 8.11. Size:838K  cn vbsemi
 aod4184.pdf

AOD4184 www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC 0.0065 at VGS = 4.5 V 70 APPLICATIONS Synchronous Rectification Power Supplies D TO-252 G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATI

 8.12. Size:1719K  cn vbsemi
 aod4180.pdf

AOD4180 www.VBsemi.tw N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0055 at VGS = 10 V 75a 80 0.0088 at VGS = 6.0 V 65a 17.1 nC APPLICATIONS 0.0115 at VGS = 5.0 V 54 Primary Side Switching Synchronous Rectification TO-252 D DC/AC Inverters LED Backlightin

 8.13. Size:265K  inchange semiconductor
 aod4189.pdf

isc P-Channel MOSFET Transistor AOD4189 FEATURES Drain Current I = -40A@ T =25 D C Drain Source Voltage- V =-40V(Min) DSS Static Drain-Source On-Resistance R =22m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 8.14. Size:249K  inchange semiconductor
 aod4184.pdf

isc N-Channel MOSFET Transistor AOD4184 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general

 8.15. Size:249K  inchange semiconductor
 aod4184a.pdf

isc N-Channel MOSFET Transistor AOD4184A FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and genera

 8.16. Size:265K  inchange semiconductor
 aod4182.pdf

isc N-Channel MOSFET Transistor AOD4182 FEATURES Drain Current I = 53A@ T =25 D C Drain Source Voltage- V =80V(Min) DSS Static Drain-Source On-Resistance R =15.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 8.17. Size:266K  inchange semiconductor
 aod4180.pdf

isc N-Channel MOSFET Transistor AOD4180 FEATURES Drain Current I = 54A@ T =25 D C Drain Source Voltage- V =80V(Min) DSS Static Drain-Source On-Resistance R =14m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

 8.18. Size:207K  inchange semiconductor
 aod4186.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor AOD4186 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 8.19. Size:249K  inchange semiconductor
 aod418.pdf

isc N-Channel MOSFET Transistor AOD418 FEATURES Drain Current I = 36A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and genera