AOD4185 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOD4185
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 62.5 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 40 A
Максимальная температура канала (Tj): 175 °C
Время нарастания (tr): 20 ns
Выходная емкость (Cd): 280 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.015 Ohm
Тип корпуса: TO-252
AOD4185 Datasheet (PDF)
aod4185 aoi4185.pdf
AOD4185/AOI4185P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4185/AOI4185 uses advanced trench VDS (V) = -40Vtechnology to provide excellent RDS(ON) and low gate ID = -40A (VGS = -10V)charge. With the excellent thermal resistance of the RDS(ON)
aod4185.pdf
AOD4185/AOI4185P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4185/AOI4185 uses advanced trench VDS (V) = -40Vtechnology to provide excellent RDS(ON) and low gate ID = -40A (VGS = -10V)charge. With the excellent thermal resistance of the RDS(ON)
aod4185.pdf
AOD4185www.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle
aod4185.pdf
isc P-Channel MOSFET Transistor AOD4185FEATURESDrain Current I = -40A@ T =25D CDrain Source Voltage-: V = -40V(Min)DSSStatic Drain-Source On-Resistance: R =15m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
aod4189.pdf
AOD4189P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4189 uses advanced trench technology and VDS (V) = -40Vdesign to provide excellent RDS(ON) with low gateID = -40A (VGS = -10V)charge. With the excellent thermal resistance of theRDS(ON)
aod4184.pdf
AOD4184/AOI418440V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD4184/AOI4184 used advanced trench technology 40V50Aand design to provide excellent RDS(ON) with low gate ID (at VGS=10V)charge. With the excellent thermal resistance of the DPAK
aod4187.pdf
AOD4187P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4187 uses advanced trench technology and VDS (V) = -40Vdesign to provide excellent RDS(ON) with low gate charge.ID = -45A (VGS = -10V)With the excellent thermal resistance of the DPAKRDS(ON)
aod4184a.pdf
AOD4184A40V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD4184A combines advanced trench MOSFET 40V50Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON). This device is well suited for high
aod4182.pdf
AOD418280V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS80VThe AOD4182 is fabricated with SDMOSTM trench ID (at VGS=10V)53Atechnology that combines excellent RDS(ON) with low gate
aod4180.pdf
AOD418080V N-Channel MOSFETTMSDMOSGeneral Description Product Summary VDS80VThe AOD4180 is fabricated with SDMOSTM trench 54A ID (at VGS=10V)technology that combines excellent RDS(ON) with low gate
aod4186.pdf
AOD4186N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide VDS (V) =40Vextremely low RDS(ON). This device is ideal for low (VGS = 10V)ID = 35Avoltage inverter applications.(VGS = 10V)RDS(ON)
aod418.pdf
AOD418/AOI41830V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD418/AOI418 uses advanced trench technology to 30V36Aprovide excellent RDS(ON), low gate charge and low gate ID (at VGS= 10V)resistance. With the excellent thermal resistance of the
aod4189.pdf
AOD4189www.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle
aod4184.pdf
AOD4184www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM RATI
aod4180.pdf
AOD4180www.VBsemi.twN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0055 at VGS = 10 V 75a80 0.0088 at VGS = 6.0 V 65a 17.1 nCAPPLICATIONS0.0115 at VGS = 5.0 V 54 Primary Side Switching Synchronous RectificationTO-252D DC/AC Inverters LED Backlightin
aod4189.pdf
isc P-Channel MOSFET Transistor AOD4189FEATURESDrain Current I = -40A@ T =25D CDrain Source Voltage-: V =-40V(Min)DSSStatic Drain-Source On-Resistance: R =22m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
aod4184.pdf
isc N-Channel MOSFET Transistor AOD4184FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral
aod4184a.pdf
isc N-Channel MOSFET Transistor AOD4184AFEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera
aod4182.pdf
isc N-Channel MOSFET Transistor AOD4182FEATURESDrain Current I = 53A@ T =25D CDrain Source Voltage-: V =80V(Min)DSSStatic Drain-Source On-Resistance: R =15.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
aod4180.pdf
isc N-Channel MOSFET Transistor AOD4180FEATURESDrain Current I = 54A@ T =25D CDrain Source Voltage-: V =80V(Min)DSSStatic Drain-Source On-Resistance: R =14m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
aod4186.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor AOD4186FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
aod418.pdf
isc N-Channel MOSFET Transistor AOD418FEATURESDrain Current I = 36A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IRFS4010-7P | STB80NF55-08T4 | BUK764R0-75C | IRFS530 | 13N40 | IRFS3006-7P
History: IRFS4010-7P | STB80NF55-08T4 | BUK764R0-75C | IRFS530 | 13N40 | IRFS3006-7P
Список транзисторов
Обновления
MOSFET: NCE65TF130T | LTP70N06P | HY3506B | HY3506P | DP3080 | CRSS035N10N | CRST037N10N | S85N16S | S85N16RP | S85N16RN | S85N16R | S85N048S | S85N042S | S85N042RP | S85N042RN | S85N042R