AOD474
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOD474
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 28.5
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 75
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 10
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.5
nS
Cossⓘ - Capacitancia
de salida: 30
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13
Ohm
Paquete / Cubierta:
TO-252
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AOD474
Datasheet (PDF)
..1. Size:290K aosemi
aod474.pdf 
AOD47475V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD474 combines advanced trench MOSFET 75Vtechnology with a low resistance package to provide ID (at VGS=10V) 10Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)
..2. Size:265K inchange semiconductor
aod474.pdf 
isc N-Channel MOSFET Transistor AOD474FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
0.1. Size:289K aosemi
aod474b.pdf 
AOD474B75V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD474B combines advanced trench MOSFET 75Vtechnology with a low resistance package to provide ID (at VGS=10V) 10Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)
0.2. Size:288K aosemi
aod474a.pdf 
AOD474A75V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD474A combines advanced trench MOSFET 75Vtechnology with a low resistance package to provide ID (at VGS=10V) 10Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)
9.1. Size:422K aosemi
aod478 aoi478.pdf 
AOD478/AOI478100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD478/AOI478 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 11Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)
9.2. Size:208K aosemi
aod476.pdf 
AOD476N-Channel Enhancement Mode Field Effect Transistor1.4General Description FeaturesThe AOD476 uses advanced trench technology and VDS (V) = 20Vdesign to provide excellent RDS(ON) with low gateID = 25A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)
9.3. Size:154K aosemi
aod472a.pdf 
AOD472AN-Channel SDMOSTM POWER TransistorGeneral Description FeaturesVDS (V) = 25VThe AOD472A is fabricated with SDMOSTM trench ID = 55A (VGS = 10V)technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON)
9.4. Size:422K aosemi
aod478.pdf 
AOD478/AOI478100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD478/AOI478 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 11Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)
9.5. Size:145K aosemi
aod472.pdf 
AOD472N-Channel Enhancement Mode Field Effect Transistor1.4General Description FeaturesThe AOD472 uses advanced trench technology and VDS (V) = 25Vdesign to provide excellent RDS(ON) with low gate ID = 55A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)
9.6. Size:789K cn vbsemi
aod472.pdf 
AOD472www.VBsemi.twN-Channel 20-V (D-S)175 _C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)aD 175_C Maximum Junction TemperatureD 100% Rg Tested 0.006 @ VGS = 4.5 V 6520200.008 @ VGS = 2.5 V 45DTO-252GDrain Connected to TabG D STop View SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Paramet
9.7. Size:265K inchange semiconductor
aod476.pdf 
isc N-Channel MOSFET Transistor AOD476FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V =20V(Min)DSSStatic Drain-Source On-Resistance: R = 21m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
9.8. Size:265K inchange semiconductor
aod478.pdf 
isc N-Channel MOSFET Transistor AOD478FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Otros transistores... AOD446
, AOD450
, AOD4504
, AOD454A
, AOD456
, AOD458
, AOD464
, AOD468
, AO3400
, AOD474A
, AOD474B
, AOD476
, AOD478
, AOD480
, AOD482
, AOD484
, AOD486A
.