AOD47475V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD474 combines advanced trench MOSFET 75Vtechnology with a low resistance package to provide ID (at VGS=10V) 10Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOD474FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

AOD474B75V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD474B combines advanced trench MOSFET 75Vtechnology with a low resistance package to provide ID (at VGS=10V) 10Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

AOD474A75V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD474A combines advanced trench MOSFET 75Vtechnology with a low resistance package to provide ID (at VGS=10V) 10Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

AOD478/AOI478100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD478/AOI478 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 11Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)

AOD476N-Channel Enhancement Mode Field Effect Transistor1.4General Description FeaturesThe AOD476 uses advanced trench technology and VDS (V) = 20Vdesign to provide excellent RDS(ON) with low gateID = 25A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)

AOD472AN-Channel SDMOSTM POWER TransistorGeneral Description FeaturesVDS (V) = 25VThe AOD472A is fabricated with SDMOSTM trench ID = 55A (VGS = 10V)technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON)

AOD478/AOI478100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD478/AOI478 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 11Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)

AOD472N-Channel Enhancement Mode Field Effect Transistor1.4General Description FeaturesThe AOD472 uses advanced trench technology and VDS (V) = 25Vdesign to provide excellent RDS(ON) with low gate ID = 55A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

AOD472www.VBsemi.twN-Channel 20-V (D-S)175 _C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)aD 175_C Maximum Junction TemperatureD 100% Rg Tested 0.006 @ VGS = 4.5 V 6520200.008 @ VGS = 2.5 V 45DTO-252GDrain Connected to TabG D STop View SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Paramet

isc N-Channel MOSFET Transistor AOD476FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V =20V(Min)DSSStatic Drain-Source On-Resistance: R = 21m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

isc N-Channel MOSFET Transistor AOD478FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose