AOD484 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOD484
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 142 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET AOD484

AOD484 Datasheet (PDF)

..1. Size:193K aosemi
aod484.pdf

AOD48430V N-Channel MOSFETGeneral Description FeaturesThe AOD484 uses advanced trench technology and VDS (V) = 30Vdesign to provide excellent RDS(ON) with low gateID = 25 A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)

..2. Size:262K inchange semiconductor
aod484.pdf

Isc N-Channel MOSFET Transistor AOD484FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

9.1. Size:299K aosemi
aod482.pdf

AOD482/AOI482100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD482/AOI482 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 32Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)

9.2. Size:299K aosemi
aod482 aoi482.pdf

9.3. Size:150K aosemi
aod486a.pdf

AOD486AN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD486A uses advanced trench technology and VDS (V) = 40Vdesign to provide excellent RDS(ON) with low gate ID = 50 A (VGS = 10V)charge.This device is suitable for use in PWM, load RDS(ON)

9.4. Size:190K aosemi
aod488.pdf

AOD488N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD488 uses advanced trench technology and VDS (V) = 40Vdesign to provide excellent RDS(ON) with low gateID = 20 A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)

9.5. Size:262K aosemi
aod480.pdf

AOD48030V N-Channel MOSFET1.4General Description FeaturesVGS=10V, ID=18AThe AOD480 uses advanced trench technology and VDS (V) = 30Vdesign to provide excellent RDS(ON) with low gate ID = 25A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

9.6. Size:263K inchange semiconductor
aod482.pdf

isc N-Channel MOSFET Transistor AOD482FEATURESDrain Current I =32A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 37m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

9.7. Size:264K inchange semiconductor
aod480.pdf

isc N-Channel MOSFET Transistor AOD480FEATURESDrain Current I =25A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose ap

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