AOD484 Todos los transistores

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AOD484 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOD484

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Corriente continua de drenaje (Id): 25 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 12 nS

Conductancia de drenaje-sustrato (Cd): 142 pF

Resistencia drenaje-fuente RDS(on): 0.015 Ohm

Empaquetado / Estuche: TO-252

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AOD484 Datasheet (PDF)

1.1. aod484.pdf Size:193K _aosemi

AOD484
AOD484

AOD484 30V N-Channel MOSFET General Description Features The AOD484 uses advanced trench technology and VDS (V) = 30V design to provide excellent RDS(ON) with low gate ID = 25 A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON) < 15 mΩ (VGS = 10V) switching and general purpose applications. RDS(ON) < 23 mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested TO252

5.1. aod480.pdf Size:262K _aosemi

AOD484
AOD484

AOD480 30V N-Channel MOSFET 1.4 General Description Features VGS=10V, ID=18A The AOD480 uses advanced trench technology and VDS (V) = 30V design to provide excellent RDS(ON) with low gate ID = 25A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON) <23 mΩ (VGS = 10V) switching and general purpose applications. RDS(ON) <33 mΩ (VGS = 4.5V) 100% UIS Tested

5.2. aod486a.pdf Size:150K _aosemi

AOD484
AOD484

AOD486A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD486A uses advanced trench technology and VDS (V) = 40V design to provide excellent RDS(ON) with low gate ID = 50 A (VGS = 10V) charge.This device is suitable for use in PWM, load RDS(ON) < 9.8 mΩ (VGS = 10V) switching and general purpose applications. RDS(ON) < 13 mΩ (VGS = 4.5V) -RoHS

5.3. aod488.pdf Size:190K _aosemi

AOD484
AOD484

AOD488 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD488 uses advanced trench technology and VDS (V) = 40V design to provide excellent RDS(ON) with low gate ID = 20 A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON) < 26 mΩ (VGS = 10V) switching and general purpose applications. RDS(ON) < 39 mΩ (VGS = 4.5V) -RoHS Co

5.4. aod482.pdf Size:299K _aosemi

AOD484
AOD484

AOD482/AOI482 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOD482/AOI482 combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 32A provide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V) < 37mΩ boost converters and synchronous rectifiers for RDS(ON) (at VGS = 4.5V) < 42mΩ consumer, telecom, i

Otros transistores... AOD468 , AOD474 , AOD474A , AOD474B , AOD476 , AOD478 , AOD480 , AOD482 , CEP83A3 , AOD486A , AOD492 , AOD496 , AOD496A , AOD498 , AOD4N60 , AOD4S60 , AOD4T60 .

 


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