Справочник MOSFET. AOD484

 

AOD484 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOD484
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 142 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для AOD484

 

 

AOD484 Datasheet (PDF)

 ..1. Size:193K  aosemi
 aod484.pdf

AOD484 AOD484

AOD48430V N-Channel MOSFETGeneral Description FeaturesThe AOD484 uses advanced trench technology and VDS (V) = 30Vdesign to provide excellent RDS(ON) with low gateID = 25 A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)

 ..2. Size:262K  inchange semiconductor
 aod484.pdf

AOD484 AOD484

Isc N-Channel MOSFET Transistor AOD484FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

 9.1. Size:299K  aosemi
 aod482.pdf

AOD484 AOD484

AOD482/AOI482100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD482/AOI482 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 32Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)

 9.2. Size:299K  aosemi
 aod482 aoi482.pdf

AOD484 AOD484

AOD482/AOI482100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD482/AOI482 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 32Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)

 9.3. Size:150K  aosemi
 aod486a.pdf

AOD484 AOD484

AOD486AN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD486A uses advanced trench technology and VDS (V) = 40Vdesign to provide excellent RDS(ON) with low gate ID = 50 A (VGS = 10V)charge.This device is suitable for use in PWM, load RDS(ON)

 9.4. Size:190K  aosemi
 aod488.pdf

AOD484 AOD484

AOD488N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD488 uses advanced trench technology and VDS (V) = 40Vdesign to provide excellent RDS(ON) with low gateID = 20 A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)

 9.5. Size:262K  aosemi
 aod480.pdf

AOD484 AOD484

AOD48030V N-Channel MOSFET1.4General Description FeaturesVGS=10V, ID=18AThe AOD480 uses advanced trench technology and VDS (V) = 30Vdesign to provide excellent RDS(ON) with low gate ID = 25A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

 9.6. Size:263K  inchange semiconductor
 aod482.pdf

AOD484 AOD484

isc N-Channel MOSFET Transistor AOD482FEATURESDrain Current I =32A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 37m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

 9.7. Size:264K  inchange semiconductor
 aod480.pdf

AOD484 AOD484

isc N-Channel MOSFET Transistor AOD480FEATURESDrain Current I =25A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose ap

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