AOD4N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOD4N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 104 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 26 nS
Cossⓘ - Capacitancia de salida: 53 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
Encapsulados: TO-252
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AOD4N60 datasheet
aod4n60.pdf
AOD4N60/AOI4N60/AOU4N60 600V,4A N-Channel MOSFET General Description Product Summary The AOD4N60 & AOI4N60 & AOU4N60 have been fabricated using an advanced high voltage MOSFET VDS 700V@150 process that is designed to deliver high levels of ID (at VGS=10V) 4A performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
aod4n60 aoi4n60 aou4n60.pdf
AOD4N60/AOI4N60/AOU4N60 600V,4A N-Channel MOSFET General Description Product Summary The AOD4N60 & AOI4N60 & AOU4N60 have been fabricated using an advanced high voltage MOSFET VDS 700V@150 process that is designed to deliver high levels of ID (at VGS=10V) 4A performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
aod4n60.pdf
Isc N-Channel MOSFET Transistor AOD4N60 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag
Otros transistores... AOD480 , AOD482 , AOD484 , AOD486A , AOD492 , AOD496 , AOD496A , AOD498 , AON6380 , AOD4S60 , AOD4T60 , AOD4T60P , AOD502 , AOD504 , AOD508 , AOD510 , AOD514 .
History: SL9N150T | NTMFS4119N
History: SL9N150T | NTMFS4119N
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