AOD4N60 MOSFET Datasheet: N-Ch, 600V, 4A. Full specification with pinout and replacement list

AOD4N60 Specs and Replacement

Type Designator: AOD4N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 53 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm

Package: TO-252

AOD4N60 substitution

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AOD4N60 datasheet

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AOD4N60/AOI4N60/AOU4N60 600V,4A N-Channel MOSFET General Description Product Summary The AOD4N60 & AOI4N60 & AOU4N60 have been fabricated using an advanced high voltage MOSFET VDS 700V@150 process that is designed to deliver high levels of ID (at VGS=10V) 4A performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) ... See More ⇒

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..3. Size:262K inchange semiconductor
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Isc N-Channel MOSFET Transistor AOD4N60 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag... See More ⇒

Detailed specifications: AOD480, AOD482, AOD484, AOD486A, AOD492, AOD496, AOD496A, AOD498, AON6380, AOD4S60, AOD4T60, AOD4T60P, AOD502, AOD504, AOD508, AOD510, AOD514