All MOSFET. AOD4N60 Datasheet

 

AOD4N60 Datasheet and Replacement


   Type Designator: AOD4N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 53 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO-252
 

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AOD4N60 Datasheet (PDF)

 ..1. Size:376K  aosemi
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AOD4N60

AOD4N60/AOI4N60/AOU4N60600V,4A N-Channel MOSFETGeneral Description Product SummaryThe AOD4N60 & AOI4N60 & AOU4N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 4Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 ..2. Size:539K  aosemi
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AOD4N60

AOD4N60/AOI4N60/AOU4N60600V,4A N-Channel MOSFETGeneral Description Product SummaryThe AOD4N60 & AOI4N60 & AOU4N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 4Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 ..3. Size:262K  inchange semiconductor
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AOD4N60

Isc N-Channel MOSFET Transistor AOD4N60FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag

Datasheet: AOD480 , AOD482 , AOD484 , AOD486A , AOD492 , AOD496 , AOD496A , AOD498 , IRLZ44N , AOD4S60 , AOD4T60 , AOD4T60P , AOD502 , AOD504 , AOD508 , AOD510 , AOD514 .

History: BUZ83 | 2SK1008-01 | H04N60F | SFF240J | NCE60NF055F | WMN30N80M3

Keywords - AOD4N60 MOSFET datasheet

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