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AOD5N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOD5N50
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 32 nS
   Cossⓘ - Capacitancia de salida: 58 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: TO-252
     - Selección de transistores por parámetros

 

AOD5N50 Datasheet (PDF)

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AOD5N50

AOD5N50500V,5A N-Channel MOSFETGeneral Description Product SummaryThe AOD5N50 is fabricated using an advanced high 600V@150voltage MOSFET process that is designed to deliver high VDSlevels of performance and robustness in popular AC-DC ID (at VGS=10V)5Aapplications.By providing low RDS(on), Ciss and Crss along

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AOD5N50

isc N-Channel MOSFET Transistor AOD5N50FEATURESDrain Current I = 5.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =1.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.1. Size:472K  aosemi
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AOD5N50

AOD5N40/AOI5N40400V,4.2A N-Channel MOSFETGeneral Description Product SummaryThe AOD5N40 & AOI5N40 have been fabricated using anadvanced high voltage MOSFET process that is designed VDS 500V@150to deliver high levels of performance and robustness in ID (at VGS=10V) 4.2Apopular AC-DC applications. RDS(ON) (at VGS=10V)

 9.2. Size:265K  inchange semiconductor
aod5n40.pdf pdf_icon

AOD5N50

isc N-Channel MOSFET Transistor AOD5N40FEATURESDrain Current I = 4.2A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R =1.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CS15N70F | IRFZ24L | NTD3055-094-1G | 2SK1601

 

 
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