AOI2N60A Todos los transistores

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 aod2n60a aoi2n60a aou2n60a.pdf

AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V Advanced High Voltage MOSFET technology Low RDS(ON) ID (at VGS=10V) 2A Low Ciss and Crss RDS(ON) (at VGS=10V)

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 aoi2n60a.pdf

AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V Advanced High Voltage MOSFET technology Low RDS(ON) ID (at VGS=10V) 2A Low Ciss and Crss RDS(ON) (at VGS=10V)

 ..3. Size:274K  inchange semiconductor
 aoi2n60a.pdf

isc N-Channel MOSFET Transistor AOI2N60A FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =4.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 7.1. Size:385K  aosemi
 aoi2n60.pdf

AOI2N60 600V, 2A N-Channel MOSFET General Description Product Summary The AOI2N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver VDS 700V@150 high levels of performance and robustness in popular AC- ID (at VGS=10V) 2A DC applications. RDS(ON) (at VGS=10V)

 7.2. Size:273K  inchange semiconductor
 aoi2n60.pdf

isc N-Channel MOSFET Transistor AOI2N60 FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =4.4 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a