AOI409 Todos los transistores

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 aod409 aoi409.pdf

AOD409/AOI409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD/I409 uses advanced trench technology to VDS (V) = -60V provide excellent RDS(ON), low gate charge and low ID = -26A (VGS = -10V) gate resistance. With the excellent thermal resistance RDS(ON)

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 aoi409.pdf

AOD409/AOI409 60V P-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology -60V Low RDS(ON) ID (at VGS=-10V) -26A Low Gate Charge RDS(ON) (at VGS=-10V)

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 aoi409.pdf

INCHANGE Semiconductor isc P-Channel MOSFET Transistor AOI409 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

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 aoi403.pdf

AOD403/AOI403 30V P-Channel MOSFET General Description Product Summary VDS -30V The AOD403/AOI403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate ID (at VGS= -20V) -70A resistance. With the excellent thermal resistance of the RDS(ON) (at VGS= -20V)

 9.2. Size:398K  aosemi
 aod403 aoi403.pdf

AOD403/AOI403 30V P-Channel MOSFET General Description Product Summary VDS -30V The AOD403/AOI403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate ID (at VGS= -20V) -70A resistance. With the excellent thermal resistance of the RDS(ON) (at VGS= -20V)

 9.3. Size:241K  inchange semiconductor
 aoi403.pdf

isc P-Channel MOSFET Transistor AOI403 FEATURES Drain Current I =-70A@ T =25 D C Drain Source Voltage- V =-30V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose