AOI409 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOD409/AOI409P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD/I409 uses advanced trench technology to VDS (V) = -60Vprovide excellent RDS(ON), low gate charge and low ID = -26A (VGS = -10V)gate resistance. With the excellent thermal resistance RDS(ON)

AOD409/AOI40960V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology -60V Low RDS(ON) ID (at VGS=-10V) -26A Low Gate Charge RDS(ON) (at VGS=-10V)

INCHANGE Semiconductorisc P-Channel MOSFET Transistor AOI409FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

AOD403/AOI40330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AOD403/AOI403 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and low gate ID (at VGS= -20V) -70Aresistance. With the excellent thermal resistance of the RDS(ON) (at VGS= -20V)

AOD403/AOI40330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AOD403/AOI403 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and low gate ID (at VGS= -20V) -70Aresistance. With the excellent thermal resistance of the RDS(ON) (at VGS= -20V)

isc P-Channel MOSFET Transistor AOI403FEATURESDrain Current I =-70A@ T =25D CDrain Source Voltage-: V =-30V(Min)DSSStatic Drain-Source On-Resistance: R = 8.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose