AOI409
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOI409
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 26
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 14.5
nS
Cossⓘ -
Output Capacitance: 241
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package: TO-251A
AOI409
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOI409
Datasheet (PDF)
..1. Size:237K aosemi
aod409 aoi409.pdf 
AOD409/AOI409P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD/I409 uses advanced trench technology to VDS (V) = -60Vprovide excellent RDS(ON), low gate charge and low ID = -26A (VGS = -10V)gate resistance. With the excellent thermal resistance RDS(ON)
..2. Size:383K aosemi
aoi409.pdf
AOD409/AOI40960V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology -60V Low RDS(ON) ID (at VGS=-10V) -26A Low Gate Charge RDS(ON) (at VGS=-10V)
..3. Size:206K inchange semiconductor
aoi409.pdf
INCHANGE Semiconductorisc P-Channel MOSFET Transistor AOI409FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM
9.1. Size:398K aosemi
aoi403.pdf
AOD403/AOI40330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AOD403/AOI403 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and low gate ID (at VGS= -20V) -70Aresistance. With the excellent thermal resistance of the RDS(ON) (at VGS= -20V)
9.2. Size:398K aosemi
aod403 aoi403.pdf
AOD403/AOI40330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AOD403/AOI403 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and low gate ID (at VGS= -20V) -70Aresistance. With the excellent thermal resistance of the RDS(ON) (at VGS= -20V)
9.3. Size:241K inchange semiconductor
aoi403.pdf
isc P-Channel MOSFET Transistor AOI403FEATURESDrain Current I =-70A@ T =25D CDrain Source Voltage-: V =-30V(Min)DSSStatic Drain-Source On-Resistance: R = 8.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: AOH3110
, AOI11S60
, AOI1N60
, AOI208
, AOI2210
, AOI2N60
, AOI2N60A
, AOI403
, IRFZ48N
, AOI4102
, AOI4126
, AOI4130
, AOI4146
, AOI418
, AOI4184
, AOI4185
, AOI423
.
