AOI423 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOI423
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 90 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 70 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 23 nS
Cossⓘ - Capacitancia de salida: 550 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
Paquete / Cubierta: TO-251A
Búsqueda de reemplazo de MOSFET AOI423
AOI423 Datasheet (PDF)
aoi423.pdf
AOD423/AOI423/AOY42330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AOD423/AOI423/AOY423 uses advanced trenchtechnology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70Aand low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V)
aoi423.pdf
isc P-Channel MOSFET Transistor AOI423FEATURESDrain Current I = -70A@ T =25D CDrain Source Voltage-: V = -30V(Min)DSSStatic Drain-Source On-Resistance: R = 8.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
aod4286 aoi4286.pdf
AOD4286/AOI4286100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD4286, AOI4286 uses trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 14Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)
aoi4286.pdf
AOD4286/AOI4286100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD4286, AOI4286 uses trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 14Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)
aoi4286.pdf
Isc N-Channel MOSFET Transistor AOI4286FEATURESWith To-251(IPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918