AOI423 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOD423/AOI423/AOY42330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AOD423/AOI423/AOY423 uses advanced trenchtechnology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70Aand low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V)

isc P-Channel MOSFET Transistor AOI423FEATURESDrain Current I = -70A@ T =25D CDrain Source Voltage-: V = -30V(Min)DSSStatic Drain-Source On-Resistance: R = 8.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

AOD4286/AOI4286100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD4286, AOI4286 uses trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 14Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

AOD4286/AOI4286100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD4286, AOI4286 uses trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 14Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

Isc N-Channel MOSFET Transistor AOI4286FEATURESWith To-251(IPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag