AOI423 MOSFET Datasheet: P-Ch, 30V, 70A. Full specification with pinout and replacement list

AOI423 Specs and Replacement

Type Designator: AOI423

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO-251A

AOI423 substitution

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AOI423 datasheet

..1. Size:374K aosemi
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AOD423/AOI423/AOY423 30V P-Channel MOSFET General Description Product Summary VDS -30V The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70A and low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V) ... See More ⇒

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AOD423/AOI423/AOY423 TM 30V P-Channel AlphaSGT General Description Product Summary VDS -30V The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70A and low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V) ... See More ⇒

..3. Size:266K inchange semiconductor
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isc P-Channel MOSFET Transistor AOI423 FEATURES Drain Current I = -70A@ T =25 D C Drain Source Voltage- V = -30V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

9.1. Size:318K aosemi
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AOD4286/AOI4286 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOD4286, AOI4286 uses trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 14A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) ... See More ⇒