All MOSFET. AOI423 Datasheet

 

AOI423 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOI423
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-251A

 AOI423 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOI423 Datasheet (PDF)

 ..1. Size:374K  aosemi
 aoi423.pdf

AOI423 AOI423

AOD423/AOI423/AOY42330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AOD423/AOI423/AOY423 uses advanced trenchtechnology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70Aand low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V)

 ..2. Size:266K  inchange semiconductor
 aoi423.pdf

AOI423 AOI423

isc P-Channel MOSFET Transistor AOI423FEATURESDrain Current I = -70A@ T =25D CDrain Source Voltage-: V = -30V(Min)DSSStatic Drain-Source On-Resistance: R = 8.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 9.1. Size:318K  aosemi
 aod4286 aoi4286.pdf

AOI423 AOI423

AOD4286/AOI4286100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD4286, AOI4286 uses trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 14Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 9.2. Size:318K  aosemi
 aoi4286.pdf

AOI423 AOI423

AOD4286/AOI4286100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD4286, AOI4286 uses trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 14Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 9.3. Size:271K  inchange semiconductor
 aoi4286.pdf

AOI423 AOI423

Isc N-Channel MOSFET Transistor AOI4286FEATURESWith To-251(IPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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