AOI442 Todos los transistores

 ..1. Size:246K  aosemi
 aoi442.pdf

AOD442/AOI442 60V N-Channel MOSFET General Description Product Summary VDS The AOD442/AOI442 used advanced trench technology to 60V 37A provide excellent RDS(ON) and low gate charge. Those ID (at VGS=10V) devices are suitable for use as a load switch or in PWM

 ..2. Size:246K  aosemi
 aod442 aoi442.pdf

AOD442/AOI442 60V N-Channel MOSFET General Description Product Summary VDS The AOD442/AOI442 used advanced trench technology to 60V 37A provide excellent RDS(ON) and low gate charge. Those ID (at VGS=10V) devices are suitable for use as a load switch or in PWM

 ..3. Size:249K  inchange semiconductor
 aoi442.pdf

isc N-Channel MOSFET Transistor AOI442 FEATURES Drain Current I = 37A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general

 9.1. Size:248K  aosemi
 aoi444.pdf

AOD444/AOI444 60V N-Channel MOSFET General Description Product Summary VDS The AOD444/AOI444 combine advanced trench MOSFET 60V 12A technology with a low resistance package to provide ID (at VGS=10V) extremely low RDS(ON). Those devices are suitable for use

 9.2. Size:248K  aosemi
 aod444 aoi444.pdf

AOD444/AOI444 60V N-Channel MOSFET General Description Product Summary VDS The AOD444/AOI444 combine advanced trench MOSFET 60V 12A technology with a low resistance package to provide ID (at VGS=10V) extremely low RDS(ON). Those devices are suitable for use

 9.3. Size:1694K  kexin
 aoi444.pdf

DIP Type MOSFET N-Channel MOSFET AOI444 (KOI444) Unit mm TO-251 Features VDS (V) = 60V 1 2 3 ID = 12 A (VGS = 10V) RDS(ON) 60m (VGS = 10V) D RDS(ON) 85m (VGS = 4.5V) 1 3 2 G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 Tc=25 12 Tc=100 9 Conti

 9.4. Size:811K  cn vbsemi
 aoi444.pdf

AOI444 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.032 at VGS = 10 V 35d TrenchFET Power MOSFET 60 21.7 0.037 at VGS = 4.5 V 30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply D TO-251 - Secondary

 9.5. Size:273K  inchange semiconductor
 aoi444.pdf

isc N-Channel MOSFET Transistor AOI444 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose