AOI442
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOI442
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7
V
|Id|ⓘ - Maximum Drain Current: 37
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 5.1
nS
Cossⓘ -
Output Capacitance: 155
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02
Ohm
Package: TO-251A
AOI442
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOI442
Datasheet (PDF)
..1. Size:246K aosemi
aoi442.pdf 
AOD442/AOI44260V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD442/AOI442 used advanced trench technology to 60V37Aprovide excellent RDS(ON) and low gate charge. Those ID (at VGS=10V)devices are suitable for use as a load switch or in PWM
..2. Size:246K aosemi
aod442 aoi442.pdf
AOD442/AOI44260V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD442/AOI442 used advanced trench technology to 60V37Aprovide excellent RDS(ON) and low gate charge. Those ID (at VGS=10V)devices are suitable for use as a load switch or in PWM
..3. Size:249K inchange semiconductor
aoi442.pdf
isc N-Channel MOSFET Transistor AOI442FEATURESDrain Current I = 37A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral
9.1. Size:248K aosemi
aoi444.pdf
AOD444/AOI44460V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD444/AOI444 combine advanced trench MOSFET 60V12Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON). Those devices are suitable for use
9.2. Size:248K aosemi
aod444 aoi444.pdf
AOD444/AOI44460V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD444/AOI444 combine advanced trench MOSFET 60V12Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON). Those devices are suitable for use
9.3. Size:1694K kexin
aoi444.pdf
DIP Type MOSFETN-Channel MOSFETAOI444 (KOI444)Unit:mmTO-251 Features VDS (V) = 60V1 2 3 ID = 12 A (VGS = 10V) RDS(ON) 60m (VGS = 10V)D RDS(ON) 85m (VGS = 4.5V)1 32GS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Source Voltage VGS 20 Tc=25 12 Tc=100 9 Conti
9.4. Size:811K cn vbsemi
aoi444.pdf
AOI444www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.032 at VGS = 10 V35d TrenchFET Power MOSFET60 21.70.037 at VGS = 4.5 V30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power SupplyDTO-251- Secondary
9.5. Size:273K inchange semiconductor
aoi444.pdf
isc N-Channel MOSFET Transistor AOI444FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
