AOI468 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOI468
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 300 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 11.5 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 31 nS
Cossⓘ - Capacitancia de salida: 90 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm
Encapsulados: TO-251A
Búsqueda de reemplazo de AOI468 MOSFET
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AOI468 datasheet
aoi468.pdf
AOD468/AOI468 300V,11.5A N-Channel MOSFET General Description Product Summary The AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed 350V@150 VDS to deliver high levels of performance and robustness in 11.5A ID (at VGS=10V) popular AC-DC applications.By providing low RDS(on), Ciss
aod468 aoi468.pdf
AOD468/AOI468 300V,11.5A N-Channel MOSFET General Description Product Summary The AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed 350V@150 VDS to deliver high levels of performance and robustness in 11.5A ID (at VGS=10V) popular AC-DC applications.By providing low RDS(on), Ciss
aoi468.pdf
isc N-Channel MOSFET Transistor AOI468 FEATURES Drain Current I = 11.5A@ T =25 D C Drain Source Voltage- V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.42 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
Otros transistores... AOI4146 , AOI418 , AOI4184 , AOI4185 , AOI423 , AOI4286 , AOI442 , AOI444 , IRFZ44N , AOI478 , AOI482 , AOI4N60 , AOI4S60 , AOI4T60 , AOI4T60P , AOI508 , AOI510 .
History: BUK753R5-60E
History: BUK753R5-60E
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