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AOI468 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOI468
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11.5 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 31 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm
   Paquete / Cubierta: TO-251A
 

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AOI468 Datasheet (PDF)

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AOI468

AOD468/AOI468300V,11.5A N-Channel MOSFETGeneral Description Product SummaryThe AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed 350V@150 VDSto deliver high levels of performance and robustness in 11.5A ID (at VGS=10V)popular AC-DC applications.By providing low RDS(on), Ciss

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AOI468

AOD468/AOI468300V,11.5A N-Channel MOSFETGeneral Description Product SummaryThe AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed 350V@150 VDSto deliver high levels of performance and robustness in 11.5A ID (at VGS=10V)popular AC-DC applications.By providing low RDS(on), Ciss

 ..3. Size:274K  inchange semiconductor
 aoi468.pdf pdf_icon

AOI468

isc N-Channel MOSFET Transistor AOI468FEATURESDrain Current I = 11.5A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.42(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Otros transistores... AOI4146 , AOI418 , AOI4184 , AOI4185 , AOI423 , AOI4286 , AOI442 , AOI444 , IRFZ44N , AOI478 , AOI482 , AOI4N60 , AOI4S60 , AOI4T60 , AOI4T60P , AOI508 , AOI510 .

 

 
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