AOI468
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOI468
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 11.5
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 12.8
nC
trⓘ - Rise Time: 31
nS
Cossⓘ -
Output Capacitance: 90
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.42
Ohm
Package: TO-251A
AOI468
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOI468
Datasheet (PDF)
..1. Size:306K aosemi
aoi468.pdf
AOD468/AOI468300V,11.5A N-Channel MOSFETGeneral Description Product SummaryThe AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed 350V@150 VDSto deliver high levels of performance and robustness in 11.5A ID (at VGS=10V)popular AC-DC applications.By providing low RDS(on), Ciss
..2. Size:306K aosemi
aod468 aoi468.pdf
AOD468/AOI468300V,11.5A N-Channel MOSFETGeneral Description Product SummaryThe AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed 350V@150 VDSto deliver high levels of performance and robustness in 11.5A ID (at VGS=10V)popular AC-DC applications.By providing low RDS(on), Ciss
..3. Size:274K inchange semiconductor
aoi468.pdf
isc N-Channel MOSFET Transistor AOI468FEATURESDrain Current I = 11.5A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.42(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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