AOI4T60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOI4T60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27 nS
Cossⓘ - Capacitancia de salida: 22 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.1 Ohm
Paquete / Cubierta: TO-251A
Búsqueda de reemplazo de AOI4T60 MOSFET
AOI4T60 Datasheet (PDF)
aoi4t60.pdf
AOD4T60/AOI4T60600V,4A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700VThe AOD4T60 & AOI4T60 are fabricated using anadvanced high voltage MOSFET process that is designed IDM 16Ato deliver high levels of performance and robustness in RDS(ON),max
aoi4t60.pdf
isc N-Channel MOSFET Transistor AOI4T60FEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =2.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
aoi4t60p.pdf
AOD4T60P/AOI4T60P600V,4A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 16A Low Ciss and Crss RDS(ON),max
aoi4t60p.pdf
isc N-Channel MOSFET Transistor AOI4T60PFEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =2.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
Otros transistores... AOI4286 , AOI442 , AOI444 , AOI468 , AOI478 , AOI482 , AOI4N60 , AOI4S60 , IRF540N , AOI4T60P , AOI508 , AOI510 , AOI514 , AOI516 , AOI530 , AOI538 , AOI5N40 .
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