AOI4T60P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOI4T60P Datasheet (PDF)

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AOD4T60P/AOI4T60P600V,4A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 16A Low Ciss and Crss RDS(ON),max

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isc N-Channel MOSFET Transistor AOI4T60PFEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =2.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

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AOD4T60/AOI4T60600V,4A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700VThe AOD4T60 & AOI4T60 are fabricated using anadvanced high voltage MOSFET process that is designed IDM 16Ato deliver high levels of performance and robustness in RDS(ON),max

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isc N-Channel MOSFET Transistor AOI4T60FEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =2.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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