AOI4T60P Datasheet and Replacement
Type Designator: AOI4T60P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 22 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
Package: TO-251A
AOI4T60P substitution
AOI4T60P Datasheet (PDF)
aoi4t60p.pdf

AOD4T60P/AOI4T60P600V,4A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 16A Low Ciss and Crss RDS(ON),max
aoi4t60p.pdf

isc N-Channel MOSFET Transistor AOI4T60PFEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =2.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
aoi4t60.pdf

AOD4T60/AOI4T60600V,4A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700VThe AOD4T60 & AOI4T60 are fabricated using anadvanced high voltage MOSFET process that is designed IDM 16Ato deliver high levels of performance and robustness in RDS(ON),max
aoi4t60.pdf

isc N-Channel MOSFET Transistor AOI4T60FEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =2.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: AOI442 , AOI444 , AOI468 , AOI478 , AOI482 , AOI4N60 , AOI4S60 , AOI4T60 , IRF540 , AOI508 , AOI510 , AOI514 , AOI516 , AOI530 , AOI538 , AOI5N40 , AOI7N60 .
Keywords - AOI4T60P MOSFET datasheet
AOI4T60P cross reference
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AOI4T60P substitution
AOI4T60P replacement



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