AOI510 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOI510
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 70 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.2 nS
Cossⓘ - Capacitancia de salida: 1204 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
Paquete / Cubierta: TO-251A
Búsqueda de reemplazo de AOI510 MOSFET
AOI510 Datasheet (PDF)
aoi510.pdf

AOD510/AOI51030V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)
aod510 aoi510.pdf

AOD510/AOI51030V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)
aoi510.pdf

isc N-Channel MOSFET Transistor AOI510FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
aoi514.pdf

AOD514/AOI514/AOY51430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)
Otros transistores... AOI468 , AOI478 , AOI482 , AOI4N60 , AOI4S60 , AOI4T60 , AOI4T60P , AOI508 , IRF640 , AOI514 , AOI516 , AOI530 , AOI538 , AOI5N40 , AOI7N60 , AOI7N65 , AOI7S65 .
History: AP99T06AGP-HF | 2SK1435
History: AP99T06AGP-HF | 2SK1435



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