All MOSFET. AOI510 Datasheet

 

AOI510 Datasheet and Replacement


   Type Designator: AOI510
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 1204 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: TO-251A
 

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AOI510 Datasheet (PDF)

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AOI510

AOD510/AOI51030V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

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AOI510

AOD510/AOI51030V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

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AOI510

isc N-Channel MOSFET Transistor AOI510FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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AOI510

AOD514/AOI514/AOY51430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AOI468 , AOI478 , AOI482 , AOI4N60 , AOI4S60 , AOI4T60 , AOI4T60P , AOI508 , IRFP460 , AOI514 , AOI516 , AOI530 , AOI538 , AOI5N40 , AOI7N60 , AOI7N65 , AOI7S65 .

History: KP504V | HN1K02FU | AP4525GEM-HF | RCD075N19 | 2SK1522-E1-E | AP3990W | HCA70R180

Keywords - AOI510 MOSFET datasheet

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