HAF1005 Todos los transistores

HAF1008(L), HAF1008(S) Silicon P Channel MOS FET Series Power Switching REJ03G0027-0100Z Rev.1.00 May.13.2003 Description This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the gate area. And this circuit operation to shut down the gate voltage in case of high junction temper

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

HAF1003(L), HAF1003(S) Silicon P Channel MOS FET Series Power Switching ADE-208-626B (Z) 3rd. Edition July 2000 This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the gate area. And this circuit operation to shut down the gate voltage in case of high junction temperature lik

HAF1004(L), HAF1004(S) Silicon P Channel MOS FET Series Power Switching ADE-208-629B (Z) 3rd. Edition May 2002 Description This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the gate area. And this circuit operation to shut down the gate voltage in case of high junction temp

HAF1004S www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symb