HAF1005 Datasheet. Specs and Replacement

Type Designator: HAF1005  📄📄 

Type of Transistor: FET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO220AB

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HAF1005 datasheet

 8.1. Size:110K  1
 haf1008l haf1008s.pdf pdf_icon

HAF1005

HAF1008(L), HAF1008(S) Silicon P Channel MOS FET Series Power Switching REJ03G0027-0100Z Rev.1.00 May.13.2003 Description This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the gate area. And this circuit operation to shut down the gate voltage in case of high junction temper... See More ⇒

 8.2. Size:200K  renesas
 haf1002l haf1002s.pdf pdf_icon

HAF1005

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.3. Size:56K  hitachi
 haf1003l haf1003s.pdf pdf_icon

HAF1005

HAF1003(L), HAF1003(S) Silicon P Channel MOS FET Series Power Switching ADE-208-626B (Z) 3rd. Edition July 2000 This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the gate area. And this circuit operation to shut down the gate voltage in case of high junction temperature lik... See More ⇒

 8.4. Size:75K  hitachi
 haf1004l haf1004s.pdf pdf_icon

HAF1005

HAF1004(L), HAF1004(S) Silicon P Channel MOS FET Series Power Switching ADE-208-629B (Z) 3rd. Edition May 2002 Description This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the gate area. And this circuit operation to shut down the gate voltage in case of high junction temp... See More ⇒

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Detailed specifications: H5N2503P, H5N5004PL, H5N5005PL, H7N0302LS, HAF1001, HAF1002, HAF1003, HAF1004, IRL3713, HAF2001, HAF2002, HAF2005, HAF2007, HAF2008, HAF2011, HAF2012, HAT1031T

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