AOK27S60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOK27S60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 357 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 27 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 33 nS
Cossⓘ - Capacitancia de salida: 80 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
Encapsulados: TO-247
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AOK27S60 datasheet
aok27s60.pdf
AOK27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOK27S60 has been fabricated using the advanced MOSTM high voltage process that is designed to deliver IDM 110A high levels of performance and robustness in switching RDS(ON),max 0.16 applications. Qg,typ 26nC By providing low RDS(on), Qg and EOSS along with Eo
aok27s60l.pdf
AOK27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOK27S60 has been fabricated using the advanced MOSTM high voltage process that is designed to deliver IDM 110A high levels of performance and robustness in switching RDS(ON),max 0.16 applications. Qg,typ 26nC By providing low RDS(on), Qg and EOSS along with Eo
aok27s60l.pdf
isc N-Channel MOSFET Transistor AOK27S60L FEATURES Drain Current I = 27A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.16 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and ge
Otros transistores... AOI7S65 , AOI8N25 , AOI9N50 , AOK10N90 , AOK18N65 , AOK20N60 , AOK20S60 , AOK22N50 , 8205A , AOK29S50 , AOK40N30 , AOK42S60 , AOK53S60 , AOK5N100 , AOK60N30 , AOK8N80 , AOK9N90 .
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