AOK27S60 Specs and Replacement
Type Designator: AOK27S60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO-247
AOK27S60 substitution
- MOSFET ⓘ Cross-Reference Search
AOK27S60 datasheet
aok27s60.pdf
AOK27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOK27S60 has been fabricated using the advanced MOSTM high voltage process that is designed to deliver IDM 110A high levels of performance and robustness in switching RDS(ON),max 0.16 applications. Qg,typ 26nC By providing low RDS(on), Qg and EOSS along with Eo... See More ⇒
aok27s60l.pdf
AOK27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOK27S60 has been fabricated using the advanced MOSTM high voltage process that is designed to deliver IDM 110A high levels of performance and robustness in switching RDS(ON),max 0.16 applications. Qg,typ 26nC By providing low RDS(on), Qg and EOSS along with Eo... See More ⇒
aok27s60l.pdf
isc N-Channel MOSFET Transistor AOK27S60L FEATURES Drain Current I = 27A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.16 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and ge... See More ⇒
Detailed specifications: AOI7S65, AOI8N25, AOI9N50, AOK10N90, AOK18N65, AOK20N60, AOK20S60, AOK22N50, 8205A, AOK29S50, AOK40N30, AOK42S60, AOK53S60, AOK5N100, AOK60N30, AOK8N80, AOK9N90
Keywords - AOK27S60 MOSFET specs
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