AOK27S60 Datasheet and Replacement
Type Designator: AOK27S60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO-247
AOK27S60 substitution
AOK27S60 Datasheet (PDF)
aok27s60.pdf

AOK27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOK27S60 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 110Ahigh levels of performance and robustness in switching RDS(ON),max 0.16applications. Qg,typ 26nCBy providing low RDS(on), Qg and EOSS along with Eo
aok27s60l.pdf

AOK27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOK27S60 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 110Ahigh levels of performance and robustness in switching RDS(ON),max 0.16applications. Qg,typ 26nCBy providing low RDS(on), Qg and EOSS along with Eo
aok27s60l.pdf

isc N-Channel MOSFET Transistor AOK27S60LFEATURESDrain Current I = 27A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.16(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andge
Datasheet: AOI7S65 , AOI8N25 , AOI9N50 , AOK10N90 , AOK18N65 , AOK20N60 , AOK20S60 , AOK22N50 , 2SK3878 , AOK29S50 , AOK40N30 , AOK42S60 , AOK53S60 , AOK5N100 , AOK60N30 , AOK8N80 , AOK9N90 .
History: SSF2429 | EM6K7 | ELM56801EA | DMP6110SSD | KI2300 | APTC60DAM18CTG | HUFA75829D3S
Keywords - AOK27S60 MOSFET datasheet
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History: SSF2429 | EM6K7 | ELM56801EA | DMP6110SSD | KI2300 | APTC60DAM18CTG | HUFA75829D3S



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