All MOSFET. AOK27S60 Datasheet

 

AOK27S60 Datasheet and Replacement


   Type Designator: AOK27S60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 357 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO-247
 

 AOK27S60 substitution

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AOK27S60 Datasheet (PDF)

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AOK27S60

AOK27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOK27S60 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 110Ahigh levels of performance and robustness in switching RDS(ON),max 0.16applications. Qg,typ 26nCBy providing low RDS(on), Qg and EOSS along with Eo

 0.1. Size:244K  aosemi
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AOK27S60

AOK27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOK27S60 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 110Ahigh levels of performance and robustness in switching RDS(ON),max 0.16applications. Qg,typ 26nCBy providing low RDS(on), Qg and EOSS along with Eo

 0.2. Size:361K  inchange semiconductor
 aok27s60l.pdf pdf_icon

AOK27S60

isc N-Channel MOSFET Transistor AOK27S60LFEATURESDrain Current I = 27A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.16(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andge

Datasheet: AOI7S65 , AOI8N25 , AOI9N50 , AOK10N90 , AOK18N65 , AOK20N60 , AOK20S60 , AOK22N50 , 8205A , AOK29S50 , AOK40N30 , AOK42S60 , AOK53S60 , AOK5N100 , AOK60N30 , AOK8N80 , AOK9N90 .

History: KP731A | BUK964R1-40E

Keywords - AOK27S60 MOSFET datasheet

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