AOK42S60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOK42S60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 417 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 39 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 53 nS
Cossⓘ - Capacitancia de salida: 135 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.099 Ohm
Encapsulados: TO-247
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AOK42S60 datasheet
aok42s60.pdf
AOK42S60 TM 600V 39A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOK42S60 has been fabricated using the advanced MOSTM high voltage process that is designed to deliver IDM 166A high levels of performance and robustness in switching RDS(ON),max 0.099 applications. Qg,typ 40nC By providing low RDS(on), Qg and EOSS along with E
aok42s60l.pdf
AOK42S60 TM 600V 39A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOK42S60 has been fabricated using the advanced MOSTM high voltage process that is designed to deliver IDM 166A high levels of performance and robustness in switching RDS(ON),max 0.099 applications. Qg,typ 40nC By providing low RDS(on), Qg and EOSS along with E
aok42s60l.pdf
isc N-Channel MOSFET Transistor AOK42S60L FEATURES Drain Current I = 39A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 99m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen
Otros transistores... AOK10N90 , AOK18N65 , AOK20N60 , AOK20S60 , AOK22N50 , AOK27S60 , AOK29S50 , AOK40N30 , IRF630 , AOK53S60 , AOK5N100 , AOK60N30 , AOK8N80 , AOK9N90 , AOL1202 , AOL1208 , AOL1240 .
History: TSM7401CS
History: TSM7401CS
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