AOK42S60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOK42S60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 417 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 39 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 53 nS
Cossⓘ - Capacitancia de salida: 135 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.099 Ohm
Paquete / Cubierta: TO-247
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AOK42S60 Datasheet (PDF)
aok42s60.pdf

AOK42S60TM600V 39A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOK42S60 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 166Ahigh levels of performance and robustness in switching RDS(ON),max 0.099applications. Qg,typ 40nCBy providing low RDS(on), Qg and EOSS along with E
aok42s60l.pdf

AOK42S60TM600V 39A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOK42S60 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 166Ahigh levels of performance and robustness in switching RDS(ON),max 0.099applications. Qg,typ 40nCBy providing low RDS(on), Qg and EOSS along with E
aok42s60l.pdf

isc N-Channel MOSFET Transistor AOK42S60LFEATURESDrain Current I = 39A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 99m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NTB6410AN | SDF1NA60



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