All MOSFET. AOK42S60 Datasheet

 

AOK42S60 Datasheet and Replacement


   Type Designator: AOK42S60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 417 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 39 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO-247
 

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AOK42S60 Datasheet (PDF)

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AOK42S60

AOK42S60TM600V 39A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOK42S60 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 166Ahigh levels of performance and robustness in switching RDS(ON),max 0.099applications. Qg,typ 40nCBy providing low RDS(on), Qg and EOSS along with E

 0.1. Size:269K  aosemi
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AOK42S60

AOK42S60TM600V 39A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOK42S60 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 166Ahigh levels of performance and robustness in switching RDS(ON),max 0.099applications. Qg,typ 40nCBy providing low RDS(on), Qg and EOSS along with E

 0.2. Size:362K  inchange semiconductor
 aok42s60l.pdf pdf_icon

AOK42S60

isc N-Channel MOSFET Transistor AOK42S60LFEATURESDrain Current I = 39A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 99m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

Datasheet: AOK10N90 , AOK18N65 , AOK20N60 , AOK20S60 , AOK22N50 , AOK27S60 , AOK29S50 , AOK40N30 , IRF630 , AOK53S60 , AOK5N100 , AOK60N30 , AOK8N80 , AOK9N90 , AOL1202 , AOL1208 , AOL1240 .

History: KP731A | BUK964R1-40E

Keywords - AOK42S60 MOSFET datasheet

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