AOK42S60 Datasheet and Replacement
Type Designator: AOK42S60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 417 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 39 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 53 nS
Cossⓘ - Output Capacitance: 135 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO-247
AOK42S60 substitution
AOK42S60 Datasheet (PDF)
aok42s60.pdf

AOK42S60TM600V 39A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOK42S60 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 166Ahigh levels of performance and robustness in switching RDS(ON),max 0.099applications. Qg,typ 40nCBy providing low RDS(on), Qg and EOSS along with E
aok42s60l.pdf

AOK42S60TM600V 39A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOK42S60 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 166Ahigh levels of performance and robustness in switching RDS(ON),max 0.099applications. Qg,typ 40nCBy providing low RDS(on), Qg and EOSS along with E
aok42s60l.pdf

isc N-Channel MOSFET Transistor AOK42S60LFEATURESDrain Current I = 39A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 99m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen
Datasheet: AOK10N90 , AOK18N65 , AOK20N60 , AOK20S60 , AOK22N50 , AOK27S60 , AOK29S50 , AOK40N30 , 7N65 , AOK53S60 , AOK5N100 , AOK60N30 , AOK8N80 , AOK9N90 , AOL1202 , AOL1208 , AOL1240 .
History: PMZB350UPE | IPP70N04S4-06 | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | SIHFDC20 | P2003EVT
Keywords - AOK42S60 MOSFET datasheet
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History: PMZB350UPE | IPP70N04S4-06 | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | SIHFDC20 | P2003EVT



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