AOK60N30 Todos los transistores

 ..1. Size:315K  aosemi
 aok60n30.pdf

AOK60N30 300V,60A N-Channel MOSFET General Description Product Summary VDS 350@150 The AOK60N30 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 60A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 0.1. Size:362K  aosemi
 aok60n30l.pdf

AOK60N30L 300V,60A N-Channel MOSFET General Description Product Summary VDS 350@150 The AOK60N30L is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 60A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 0.2. Size:378K  inchange semiconductor
 aok60n30l.pdf

isc N-Channel MOSFET Transistor AOK60N30L FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage- V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.056 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 9.1. Size:590K  aosemi
 aok60b65h1.pdf

AOK60B65H1 TM 650V, 60A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V Latest Alpha IGBT ( IGBT) technology 650V breakdown voltage IC (TC=100 60A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.88V C) High efficient turn-on di/dt controllability Very high switching speed Lo

 9.2. Size:602K  aosemi
 aok60b65hq3.pdf

AOK60B65HQ3 TM 650V, 60A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage High switching speed IC (TC=100 C) 60A Very low Vf and Qrr VCE(sat) (TJ=25 C) 1.95V Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications PFC applic

 9.3. Size:1105K  aosemi
 aok60b65h2al.pdf

AOK60B65H2AL TM 650V, 60A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) Technology 650V 650V Breakdown voltage IC (TC=100 C) 60A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.95V High efficient turn-on di/dt controllability Very high switching speed Low Turn

 9.4. Size:725K  aosemi
 aok60b60d1.pdf

AOK60B60D1 TM 600V, 60A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 60A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.85V of paralleling, minimal gate spike under high dV/dt conditions and resistance

 9.5. Size:1294K  aosemi
 aok60b65m3.pdf

AOK60B65M3 TM 650V, 60A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 60A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.94V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficienci