AOK60N30 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOK60N30
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 658 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 222 nS
   Cossⓘ - Capacitancia de salida: 593 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.056 Ohm
   Paquete / Cubierta: TO-247

Búsqueda de reemplazo de MOSFET AOK60N30

AOK60N30 Datasheet (PDF)

..1. Size:315K aosemi
aok60n30.pdf

AOK60N30300V,60A N-Channel MOSFETGeneral Description Product Summary VDS350@150The AOK60N30 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 60Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

0.1. Size:362K aosemi
aok60n30l.pdf

AOK60N30L300V,60A N-Channel MOSFETGeneral Description Product Summary VDS350@150The AOK60N30L is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 60Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

0.2. Size:378K inchange semiconductor
aok60n30l.pdf

isc N-Channel MOSFET Transistor AOK60N30LFEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.056(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

9.1. Size:590K aosemi
aok60b65h1.pdf

AOK60B65H1TM650V, 60A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V Latest Alpha IGBT ( IGBT) technology 650V breakdown voltageIC (TC=100 60AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.88VC) High efficient turn-on di/dt controllability Very high switching speed Lo

9.2. Size:602K aosemi
aok60b65hq3.pdf

AOK60B65HQ3TM 650V, 60A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V 650V breakdown voltage High switching speedIC (TC=100C) 60A Very low Vf and QrrVCE(sat) (TJ=25C) 1.95V Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technologyApplications PFC applic

9.3. Size:1105K aosemi
aok60b65h2al.pdf

AOK60B65H2ALTM650V, 60A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) Technology 650V 650V Breakdown voltageIC (TC=100C) 60A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.95V High efficient turn-on di/dt controllability Very high switching speed Low Turn

9.4. Size:725K aosemi
aok60b60d1.pdf

AOK60B60D1TM600V, 60A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 60Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance

9.5. Size:1294K aosemi
aok60b65m3.pdf

AOK60B65M3TM650V, 60A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 60A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.94V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficienci

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