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AOK60N30 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOK60N30
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 658 W
   Voltaje máximo drenador - fuente |Vds|: 300 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 60 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4.1 V
   Carga de la puerta (Qg): 88 nC
   Tiempo de subida (tr): 222 nS
   Conductancia de drenaje-sustrato (Cd): 593 pF
   Resistencia entre drenaje y fuente RDS(on): 0.056 Ohm
   Paquete / Cubierta: TO-247

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AOK60N30 Datasheet (PDF)

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aok60n30.pdf

AOK60N30
AOK60N30

AOK60N30300V,60A N-Channel MOSFETGeneral Description Product Summary VDS350@150The AOK60N30 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 60Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 0.1. Size:362K  aosemi
aok60n30l.pdf

AOK60N30
AOK60N30

AOK60N30L300V,60A N-Channel MOSFETGeneral Description Product Summary VDS350@150The AOK60N30L is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 60Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 0.2. Size:378K  inchange semiconductor
aok60n30l.pdf

AOK60N30
AOK60N30

isc N-Channel MOSFET Transistor AOK60N30LFEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.056(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

 9.1. Size:725K  aosemi
aok60b60d1.pdf

AOK60N30
AOK60N30

AOK60B60D1TM600V, 60A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 60Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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