AOK60N30 - описание и поиск аналогов

AOK60N30 300V,60A N-Channel MOSFET General Description Product Summary VDS 350@150 The AOK60N30 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 60A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

AOK60N30L 300V,60A N-Channel MOSFET General Description Product Summary VDS 350@150 The AOK60N30L is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 60A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOK60N30L FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage- V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.056 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

AOK60B65H1 TM 650V, 60A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V Latest Alpha IGBT ( IGBT) technology 650V breakdown voltage IC (TC=100 60A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.88V C) High efficient turn-on di/dt controllability Very high switching speed Lo

AOK60B65HQ3 TM 650V, 60A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage High switching speed IC (TC=100 C) 60A Very low Vf and Qrr VCE(sat) (TJ=25 C) 1.95V Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications PFC applic

AOK60B65H2AL TM 650V, 60A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) Technology 650V 650V Breakdown voltage IC (TC=100 C) 60A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.95V High efficient turn-on di/dt controllability Very high switching speed Low Turn

AOK60B60D1 TM 600V, 60A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 60A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.85V of paralleling, minimal gate spike under high dV/dt conditions and resistance

AOK60B65M3 TM 650V, 60A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 60A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.94V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficienci