AOL1240 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOL1240
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 69 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 42 nC
   trⓘ - Tiempo de subida: 3.5 nS
   Cossⓘ - Capacitancia de salida: 920 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
   Paquete / Cubierta: ULTRA-SO8

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AOL1240 Datasheet (PDF)

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aol1240.pdf

AOL124040V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AOL1240 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 69Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

8.1. Size:260K aosemi
aol1242.pdf

AOL124240V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AOL1242 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 69Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.1. Size:173K aosemi
aol1206.pdf

AOL120630V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOL1206 uses trench MOSFET technology that is 30Vuniquely optimized to provide the most efficient high ID (at VGS=10V)54Afrequency switching performance.Power losses are

9.2. Size:242K aosemi
aol1208.pdf

AOL120830V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOL1208 uses trench MOSFET technology that is 30V50Auniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance.Power losses are

9.3. Size:223K aosemi
aol1202.pdf

AOL120230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AOL1202 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 54Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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