All MOSFET. AOL1240 Datasheet

 

AOL1240 Datasheet and Replacement


   Type Designator: AOL1240
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 69 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 42 nC
   trⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 920 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: ULTRA-SO8
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AOL1240 Datasheet (PDF)

 ..1. Size:263K  aosemi
 aol1240.pdf pdf_icon

AOL1240

AOL124040V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AOL1240 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 69Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

 8.1. Size:260K  aosemi
 aol1242.pdf pdf_icon

AOL1240

AOL124240V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AOL1242 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 69Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

 9.1. Size:173K  aosemi
 aol1206.pdf pdf_icon

AOL1240

AOL120630V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOL1206 uses trench MOSFET technology that is 30Vuniquely optimized to provide the most efficient high ID (at VGS=10V)54Afrequency switching performance.Power losses are

 9.2. Size:242K  aosemi
 aol1208.pdf pdf_icon

AOL1240

AOL120830V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOL1208 uses trench MOSFET technology that is 30V50Auniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance.Power losses are

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