AOL1401 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOL1401
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 38 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 85 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 560 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Paquete / Cubierta: ULTRA-SO8
Búsqueda de reemplazo de AOL1401 MOSFET
AOL1401 Datasheet (PDF)
aol1401.pdf

AOL1401P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate VDS (V) = -38Vcharge with a 25V gate rating. This device is suitable ID = -85Afor use as a load switch or in PWM applications. It is RDS(ON)
aol1404g.pdf

AOL1404G20V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 46A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)
aol1404.pdf

AOL140420V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOL1404 combines advanced trench MOSFET 20Vtechnology with a low resistance package to provide ID (at VGS=4.5V)45Aextremely low RDS(ON). This device is ideal for load switch
aol1408.pdf

AOL1408N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1408 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunity and ID = 85A (VGS = 10V)body diode characteristics. This device is ideally suited RDS(ON)
Otros transistores... AOK5N100 , AOK60N30 , AOK8N80 , AOK9N90 , AOL1202 , AOL1208 , AOL1240 , AOL1242 , SPP20N60C3 , AOL1404 , AOL1413 , AOL1414 , AOL1426 , AOL1428A , AOL1432 , AOL1432A , AOL1448 .
History: STL80N3LLH6 | BUK962R8-30B
History: STL80N3LLH6 | BUK962R8-30B



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