AOL1401 Datasheet and Replacement
Type Designator: AOL1401
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 38 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 61.2 nC
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 560 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: ULTRA-SO8
AOL1401 Datasheet (PDF)
aol1401.pdf

AOL1401P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate VDS (V) = -38Vcharge with a 25V gate rating. This device is suitable ID = -85Afor use as a load switch or in PWM applications. It is RDS(ON)
aol1404g.pdf

AOL1404G20V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 46A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)
aol1404.pdf

AOL140420V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOL1404 combines advanced trench MOSFET 20Vtechnology with a low resistance package to provide ID (at VGS=4.5V)45Aextremely low RDS(ON). This device is ideal for load switch
aol1408.pdf

AOL1408N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1408 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunity and ID = 85A (VGS = 10V)body diode characteristics. This device is ideally suited RDS(ON)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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