AOL1401 Specs and Replacement
Type Designator: AOL1401
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 38 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 560 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: ULTRA-SO8
AOL1401 substitution
- MOSFET ⓘ Cross-Reference Search
AOL1401 datasheet
aol1401.pdf
AOL1401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate VDS (V) = -38V charge with a 25V gate rating. This device is suitable ID = -85A for use as a load switch or in PWM applications. It is RDS(ON) ... See More ⇒
aol1404g.pdf
AOL1404G 20V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 46A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V) ... See More ⇒
aol1404.pdf
AOL1404 20V N-Channel MOSFET General Description Product Summary VDS The AOL1404 combines advanced trench MOSFET 20V technology with a low resistance package to provide ID (at VGS=4.5V) 45A extremely low RDS(ON). This device is ideal for load switch ... See More ⇒
aol1408.pdf
AOL1408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1408 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), shoot-through immunity and ID = 85A (VGS = 10V) body diode characteristics. This device is ideally suited RDS(ON) ... See More ⇒
Detailed specifications: AOK5N100, AOK60N30, AOK8N80, AOK9N90, AOL1202, AOL1208, AOL1240, AOL1242, K3569, AOL1404, AOL1413, AOL1414, AOL1426, AOL1428A, AOL1432, AOL1432A, AOL1448
Keywords - AOL1401 MOSFET specs
AOL1401 cross reference
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History: KRF7205
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