All MOSFET. AOL1401 Datasheet

 

AOL1401 Datasheet and Replacement


   Type Designator: AOL1401
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 38 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 61.2 nC
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: ULTRA-SO8
 
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AOL1401 Datasheet (PDF)

 ..1. Size:144K  aosemi
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AOL1401

AOL1401P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate VDS (V) = -38Vcharge with a 25V gate rating. This device is suitable ID = -85Afor use as a load switch or in PWM applications. It is RDS(ON)

 8.1. Size:352K  aosemi
aol1404g.pdf pdf_icon

AOL1401

AOL1404G20V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 46A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)

 8.2. Size:231K  aosemi
aol1404.pdf pdf_icon

AOL1401

AOL140420V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOL1404 combines advanced trench MOSFET 20Vtechnology with a low resistance package to provide ID (at VGS=4.5V)45Aextremely low RDS(ON). This device is ideal for load switch

 8.3. Size:208K  aosemi
aol1408.pdf pdf_icon

AOL1401

AOL1408N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1408 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunity and ID = 85A (VGS = 10V)body diode characteristics. This device is ideally suited RDS(ON)

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